HT Semiconductor 2sa1662 free download

File name 2sa1662.pdf

2SA1662 TRANSISTOR (PNP) FEATURES SOT-89 Complementary to KTC4374 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 2. COLLECTOR 1 VCBO Collector-Base Voltage -80 V 2 Collector-Emitter Voltage -80 V 3. EMITTER VCEO 3 VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.4 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -80 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-80V,IE=0 -0.1 A Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A hFE(1) VCE=-2V,IC=-50mA 70 240 DC current gain hFE(2) VCE=-2V,IC=-200mA 40 Collector-emitter saturation voltage VCE(sat) IC=-200mA,IB=-20mA -0.4 V Base-emitter voltage VBE VCE=-2V,IC=-5mA -0.55 -0.8 V Transition frequency fT VCE=-10V,IC=-10mA 120 MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 14 pF CLASSIFICATION OF hFE(1) Rank O Y Range 70-140